| NO. | Item | Specifications | |
| 1 | Model | WYY-EBD02-AB | |
| 2 | Protection IC | Seiko S-8254 | |
| 3 | MOSFET | AO4407, 4MOS | |
| 4 | Dimension | L45*W15*T4.0mm | |
| 5 | Voltage | DC 12.6V CC/CV | |
| 6 | Current | Self Rated current | ≤50uA |
| Max. contiunous charge current | 7A | ||
| Max. continuous discharge current | 4-6A | ||
| 7 | Overcharge protection for single cell | Detection voltage | 4.275V +/-0.05V |
| Detection delay | 1.0±0.5 mS | ||
| Recovery voltage | 4.075V±0.05V | ||
| 8 | Overdischarge protection voltage for single cell | Detection voltage | 2.30V +/- 0.08V |
| Detection delay | 1.0±0.5 mS | ||
| Recovery voltage | 2.7±0.10V | ||
| 9 | Internal resistance |
≤40mΩ |
|
| 10 | Excess current threshold (IEC) | 10-15A | |
| 11 | Maximum Continuous Current | 4-6A | |
| 12 | Short detection delay time | MAX.18mS | |
| 13 | Supply current (V cell=3.5V) | MAX.15μA | |
| 14 | Standby current (V cell=1.8v) | MAX.1μA | |
| 12 | Temperature | Operating temperature | -40-+85°C |
| Storage temperature | -40-+125°C | ||
